Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-19T19:00:29.344Z Has data issue: false hasContentIssue false
  • English
  • Français

CW and Time-Resolved Photoluminescence Analysis of Silicon Implanted Glass Low-Temperature Annealed at Different Times

Published online by Cambridge University Press:  10 February 2011

Gong-Ru Lin  and
Chun-Jung Lin
Gong-Ru Lin
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.
Chun-Jung Lin
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C.
Get access

Abstract

The effects of annealing time on continuous-wave (CW) and nanosecond time-resolved (TR) photoluminescence (PL) spectra of silicon-ion-implanted Borosilicate glass (BSO:Si+) annealing at 500°C are characterized. A broadband CWPL of the as-implanted BSO:Si+ at 450-530 nm is observed, and the luminescent peak is found to slightly red-shift after annealing for 90 min. The increasing CWPL intensity reveals that the natural oxygen vacancy (NOV, ΞSi Si-SiΞ) related irradiative defect is highly activated during 30-min annealing, however, which abruptly decreases with the annealing lengthens to 60-min or longer. The TRPL analysis indicates a non-radiative recombination process with a sub-picosecond lifetime for the blank BSO and the as-implanted BSO:Si+ samples, which gradually disappears as the BSO:Si+ is long-term annealed. The irradiative luminescent lifetime of the 60-min annealed BSO:Si+ is lengthened from 1.7 ns to 2.8 ns, which reveals that the density of the NOV defect is decreasing by at least one order of magnitude. A longer irradiative decay with nearly identical lifetime is also found in all annealed BSO:Si+. The ratios of TRPL peak intensities for different samples correlate well with those observed in CWPL measurement, however, the weighting factors of TRPL intensities for the latter two decaying components are vicissitudinous each other in different samples BSO:Si+. This interprets a significant evolution among different decaying mechanisms during the annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I4.4
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Klimov, V. I., Schwarz, Ch. J., McBranch, D. W., and White, C. W., Appl. Phys. Lett., 73, pp. 2603 (1998).Google Scholar
2. Mimura, A.,Fujii, M., Hayashi, S., and Yamamoto, K., J. Lumin., 87-89 429 (2000).Google Scholar
3. Liao, L. S., Bao, X. M., Zheng, X. Q., Li, N. S., and Min, N. B., Appl. Phys. Lett., 68, 850 (1996).Google Scholar
4. Amans, D., Guillois, O., Ledoux, G., Porterat, D., and Reynaud, C., J. Appl. Phys., 91, 5334 (2002).Google Scholar
5. Liao, L. S., Bao, X. M., Li, N. S., Zheng, X. Q., and Min, N. B., J. Lumin., 68 199 (1996).Google Scholar
6. Song, H. Z., Bao, X.M., Li, N. S., and Zhang, J.Y., J.Appl. Phys., 82 4028 (1997).Google Scholar
7. Song, H. Z. and Bao, X. M., Phys. Rev. B, 55 6988 (1997).Google Scholar
8. Shimizu-Iwayma, T., Nakao, S., and Saitoh, K., J. Appl. Phys., 65 1814 (1994).Google Scholar