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Current Injection UV-Emission from InAlGaN Multi-Quantum-Well Light-Emitting Diodes

Published online by Cambridge University Press:  17 March 2011

A. Kinoshita ,
H. Hirayama ,
M. Ainoya ,
J. S. Kim ,
A. Hirata  and
Y. Aoyagi
A. Kinoshita
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
H. Hirayama
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
M. Ainoya
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
J. S. Kim
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
A. Hirata
Affiliation:
Department of Chemical Engineering, Waseda University, Okubo 3-4-1, Shinjuku-ku, Tokyo, 169-8555, Japan
Y. Aoyagi
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Hirosawa 2-1, Wako-shi, Saitama, 351-0198, Japan
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Abstract

InAlGaN quaternary material is very attractive for realizing ultraviolet (UV) emitting devices working at 300 – 350 nm wavelength range. We demonstrate current injection into 340 nm-band InAlGaN based UV light emitting diodes (LEDs), for the first time, fabricated by metal organic vapor phase epitaxy (MOVPE). We performed current injection into AlGaN/AlGaN multi quantum well (MQW), bulk InAlGaN quaternary and InAlGaN/InAlGaN MQW LEDs through Mg-doped AlGaN/GaN superlattice hole conductive layers. The injected current density was ranging 0 – 0.5 kA/cm2 under pulsed or CW operation. The intensity of both photoluminescence (PL) and electroluminescence for InAlGaN quaternary-based LED was much higher than that for AlGaN based LEDs at room temperature. From these results InAlGaN quaternary-based QWs are expected to realize high intensity UV LEDs and LDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G12.6
Copyright
Copyright © Materials Research Society 2001

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References

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