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Cu-In and Cu-Zn-Sn Films as Precursors for Production of CuInSe2 and Cu2ZnSnSe4 Thin Films

Published online by Cambridge University Press:  31 January 2011

Olga Volobujeva ,
Enn Mellikov ,
Jaan Raudoja ,
Sergei Bereznev  and
Maris Pilvet
Olga Volobujeva
Affiliation:
v.olga@staff.ttu.ee, Tallinn University of Technology, Materials Science, Tallinn, Estonia
Enn Mellikov
Affiliation:
ennm@staff.ttu.ee, Tallinn University of Technology, Materials Science, Tallinn, Estonia
Jaan Raudoja
Affiliation:
raudoja@staff.ttu.ee, Tallinn University of Technology, Materials Science, Tallinn, Estonia
Sergei Bereznev
Affiliation:
sergei@staff.ttu.ee, Tallinn University of Technology, Materials Science, Tallinn, Estonia
Maris Pilvet
Affiliation:
maris.pilvet@mail.ee, Tallinn University of Technology, Materials Science, Tallinn, Estonia
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Abstract

The co-sputtered Cu-In precursor layers were characterized by bi-layer surface structure in which island-type crystals were formed in a small-crystalline matrix layer. The elemental composition of the island-type crystals corresponds to the compound CuIn2 and the matrix (area) consists of copper-rich Cu11In9 phase. The surface morphology of sequentially evaporated Cu-Zn-Sn precursor layers is determined by the deposition order of stacked consistent metal layers. Precursor Mo-Sn-Zn-Cu films exhibit a well-formed “mesa-like” structure of the surface in which larger crystals (about 1,5 μm) are located on a “small-crystalline” valley. For films with other sequences of metallic layers, the mesa like structure is not so well exposed and well formed flat precursor layers were produced replacing separate metallic Cu and Sn layers with Cu/Sn alloy layer. Selenization of both Cu-In and Cu-Zn-Sn precursor layers begins with the formation of binary Cu-selenides with compositions varying with the temperature. At temperatures higher than 3700C the selenization of Cu-In results in single-phase CuInSe2 films in contrast to the selenization of Sn-Zn-Cu films that results always in multi-phase films consisting of high quality Cu2ZnSnSe4 crystals and of separate small-crystalline phase of ZnSe.

Keywords

annealingscanning electron microscopy (SEM)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M05-40
Copyright
Copyright © Materials Research Society 2009

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