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Crystallographic Effects on the Photoelectrochemical Etching of Gratings in Compound Semiconductors

Published online by Cambridge University Press:  28 February 2011

Michael M. Carrabba ,
Nguyet M. Nguyen  and
R. David Rauh
Michael M. Carrabba
Affiliation:
EIC Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
Nguyet M. Nguyen
Affiliation:
EIC Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
R. David Rauh
Affiliation:
EIC Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
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Abstract

Grooves have been etched photoelectrochemically into a (100) n-GaAs surface using a 100 cycle/mm grating mask to define the illuminated area. The degree of mask undercutting and the shape of the groove bottom are shown to be functions of doping density and crystallographic orientation. High doping density gives rise to reduced undercutting, presumably due to a lesser extent of surface diffusion of photogenerated holes.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 665
Copyright
Copyright © Materials Research Society 1987

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