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Crystallographic Defect Related Degradation in High Density Memory Devices

Published online by Cambridge University Press:  26 February 2011

S.S. Kim  and
W. Wijaranakula
S.S. Kim
Affiliation:
Texas Instruments, Inc., 13353 Floyd Road, MS 374, Dallas, Texas 75265
W. Wijaranakula
Affiliation:
Shin-Etsu, SEH America, Inc., 4111 NE 112th Avenue, Vancouver, Washington 98682.
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Abstract

Crystallographic defect related degradation in high density memory devices was investigated. The results indicate that the refresh time degradation and bit failure mechanism are directly related to the crystal originated defects generated during Czochralski crystal growth. Defects associated with vacancy aggregations are found to have a detrimental effect on the overall performance of memory devices. Other defects, such as oxide polyhedral precipitates, contribute to a high number of cumulative fail bits, particularly in the bottom section of the crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 725
Copyright
Copyright © Materials Research Society 1995

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