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Crystallographic Analysis Of Flow Pattern Defects In Dislocated Czochralski Silicon Crystals

Published online by Cambridge University Press:  15 February 2011

Y. Ikematsu ,
T. Iwasaki ,
H. Harada ,
K. Tanaka ,
M. Fujinami  and
M. Hasebe
Y. Ikematsu
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 5–10–1 Fuchinobe, Sagamnihara, Kanagawa 229, Japan
T. Iwasaki
Affiliation:
NSC Electron Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
H. Harada
Affiliation:
NSC Electron Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
K. Tanaka
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 5–10–1 Fuchinobe, Sagamnihara, Kanagawa 229, Japan
M. Fujinami
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki, Kanagawa 211, Japan
M. Hasebe
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
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Abstract

In dislocated Cz-Si crystals, rows of flow patterns (FP) and Secco etch pits (SEP) (2–3 mm in length, along <110> direction) can be revealed by Secco etch without agitation. In this study, the crystal defects forming FP-SEP rows in dislocated Cz-Si crystals are investigated by transmission electron microscopy. Microdefects, 0.1 μm in size, are observed in a row along a FP-SEP row, <110> direction. These defects were identified as oxygen precipitates with or without dislocation loops (interstitial-type), and voids with oxidized interiors. We conclude that FP originate from interstitial-type dislocation loops, and SEP are due to oxygen precipitates or voids.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 125
Copyright
Copyright © Materials Research Society 1997

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References

Refernces

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