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Crystallization of Germanium-Carbon Alloys - Structure and Electronic Transport

Published online by Cambridge University Press:  15 February 2011

T.-M. John ,
J. Bläsing ,
P. Veit  and
T. Drüsedau
T.-M. John
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke Universität, PF 4120, 39016 Magdeburg, Germany, thomas-maik.john@physik.uni-magdeburg.de
J. Bläsing
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke Universität, PF 4120, 39016 Magdeburg, Germany, thomas-maik.john@physik.uni-magdeburg.de
P. Veit
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke Universität, PF 4120, 39016 Magdeburg, Germany, thomas-maik.john@physik.uni-magdeburg.de
T. Drüsedau
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke Universität, PF 4120, 39016 Magdeburg, Germany, thomas-maik.john@physik.uni-magdeburg.de
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Abstract

Amorphous Ge1-xCx alloys were deposited by rf-magnetron sputtering from a germanium target in methane-argon atmosphere. Structural investigations were performed by means of wide and small angle X-ray scattering, X-ray reflectometry and cross-sectional transmission electron microscopy. The electronic transport properties were characterized using Hall-measurements and temperature depended conductivity. The results of X-ray techniques together with the electron microscopy clearly proof the existence of a segregation of the components and cluster formation already during deposition. The temperature dependence of the electronic conductivity in the as-prepared films follows the Mott' T−1/4 law, indicating transport by a hopping process. After annealing at 870 K, samples with x≤0.4 show crystallization of the Ge-clusters with a crystallite size being a function of x. After Ge-crystallization, the conductivity increases by 4 to 5 orders of magnitude. Above room temperature, electronic transport is determined by a thermally activated process. For lower temperatures, the σ(T) curves show a behaviour which is determined by the crystallite size and the free carrier concentration, both depending on the carbon content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 427
Copyright
Copyright © Materials Research Society 1997

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