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Crystal-Axis-Rotation of Laser-Recrystallized Silicon on Insulator

Published online by Cambridge University Press:  21 February 2011

K. Sugahara ,
T. Ippóshi ,
Y. Inoue ,
T. Nishimura  and
Y. Akasaka
K. Sugahara
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
T. Ippóshi
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
Y. Inoue
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
T. Nishimura
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
Y. Akasaka
Affiliation:
LSI R&D Laboratory Mitsubishi Electric Corporation 4-1 Mizuhara Itami 664, JAPAN
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Abstract

The relation between the seed pitch and defect density of the laserrecrystallized SOI film was investigated. It was found that the defect density of the SOI increases as the seed pitch increases. The dependences of the laser scan speed and laser power on rotation angle of the SOI film were experimentally and numerically investigated. The crystal-axisrotation of the SOI film was considered to be due to the difference of the temperature between the top and bottom surface of the SOI film near the liquid-solid interface. A polysilicon heat sink structure with high thermal conductivity was newly proposed and was found to reduce the rotation in a small angle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 371
Copyright
Copyright © Materials Research Society 1990

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References

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