Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-25T13:33:32.897Z Has data issue: false hasContentIssue false
  • English
  • Français

Cryo-Implantation Technology for Controlling Defects and impurity out diffusion

Published online by Cambridge University Press:  17 March 2011

Atsushi Murakoshi ,
Kyoichi Suguro ,
Masao Iwase ,
Mitsuhiro Tomita  and
Katsuya Okumura
Atsushi Murakoshi
Affiliation:
Process & Manufacturing Eng. Center, Semiconductor Company, TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan, Phone: +81-45-770-3663, Fax: +81-45-770-3577 E-mail:murakoshi@amc.toshiba.co.jp
Kyoichi Suguro
Affiliation:
Process & Manufacturing Eng. Center, Semiconductor Company, TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanPhone: +81-45-770-3663, Fax: +81-45-770-3577
Masao Iwase
Affiliation:
Process & Manufacturing Eng. Center, Semiconductor Company, TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanPhone: +81-45-770-3663, Fax: +81-45-770-3577
Mitsuhiro Tomita
Affiliation:
Process & Manufacturing Eng. Center, Semiconductor Company, TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanPhone: +81-45-770-3663, Fax: +81-45-770-3577
Katsuya Okumura
Affiliation:
Process & Manufacturing Eng. Center, Semiconductor Company, TOSHIBA Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JapanPhone: +81-45-770-3663, Fax: +81-45-770-3577
Get access

Abstract

We propose a novel process module by using cryo-implantation and rapid thermal annealing (RTA). Boron or arsenic ions were implanted into a 8 inch (100) Si substrate which was cooled by using liquid nitrogen. The substrate temperature was controlled to be below at -160°C during ion implantation. It was found that an amorphous layer was formed by boron or arsenic implantation and the amorphous layer was completely recovered to a single crystal after annealing at 900°C for 30sec. No dislocation was observed in the implanted layer. It was also found that the thermal diffusion of boron was suppressed by cryo-implantation. PN junction depth was found to be about 10-20% shallower than that of room temperature implantation. These results suggest that transient enhanced diffusion of boron can be reduced by suppressing vacancy migration toward the surface during implantation. Cryo-implantation was found to be very effective in reducing defects and PN junction leakage was successfully reduced by one order of magnitude as compared with room temperature implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B3.8
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Suzuki, T., Yamaguchi, H., Ohzono, S., Natsuaki, N., Ext.Abst.of the 22nd Int.Conf.on Solid State Device and Materials (1990) pp.1163–1164.Google Scholar
2. Takakura, M., Kinoshita, T., Uranishi, T., Miyazaki, S., Koyanagi, M., and Hirose, M., Ext.Abst.of the 1991 Int.Conf. on Solid State Device and Materials (1991) pp.219–221.Google Scholar
3. Kase, M., Kikuchi, Y. Kimura, M., Mori, H., and Liebert, R. B., J. Appl. Lett., 75 (1994) pp.3358–3364 Google Scholar
4. Watkins, G. D., Mat. Res. Soc. Symp. Proc. Vol. 469 (1997) pp.139–150.10.1557/PROC-469-139Google Scholar