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Croconic Acid Thin Film Formation for Ferroelectric Gate OFETs

Published online by Cambridge University Press:  16 December 2013

Shun-ichiro Ohmi ,
Kazuaki Takayama  and
Hiroshi Ishiwara
Shun-ichiro Ohmi
Affiliation:
Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
Kazuaki Takayama
Affiliation:
Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
Hiroshi Ishiwara
Affiliation:
Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
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Abstract

Pentacene-based ferroelectric gate transistors with croconic acid (CrA) thin film was fabricated for the first time. The memory window (MW) of 1.9 V was obtained from the capacitance-voltage (C-V) characteristics of Al/CrA(50 nm)/SiO2/Si(100) metal-ferroelectric-insulator-semiconductor (MFIS) diode, where the deposition temperature of CrA was room temperature (RT). Butterfly type C-V characteristics was observed for Al/CrA(50 nm)/Al/SiO2/ Si(100) metal-ferroelectric-metal (MFM) diode. Furthermore, a pentacene-based p-type organic field-effect transistor (OFET) with CrA gate insulator was fabricated, and clockwise hysteresis loop was observed in ID-VG characteristic, which is attributed to the ferroelectric properties of CrA gate insulator.

Keywords

organicferroelectricmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1587: Symposium D – Advances in Ferroelectric and Multiferroic Materials by Nanostructure Engineering , 2014 , jsapmrs13-1587-7087
Copyright
Copyright © Materials Research Society 2013 

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References

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