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A Critical Test of Defect Creation Models in Hydrogenated Amorphous Silicon Alloys

Published online by Cambridge University Press:  17 March 2011

Kimon C. Palinginis ,
Jeffrey C. Yang ,
S. Guha  and
J. David Cohen
Kimon C. Palinginis
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A
Jeffrey C. Yang
Affiliation:
United Solar Systems Corporation, 1100 W. Maple Road, Troy, MI 48084, U.S.A
S. Guha
Affiliation:
United Solar Systems Corporation, 1100 W. Maple Road, Troy, MI 48084, U.S.A
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403, U.S.A
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Abstract

Using the modulated photocurrent method we studied the deep defect creation and annealing kinetics of amorphous silicon-germanium alloys with Ge fractions below 10at.%. The modulated photocurrent spectroscopy clearly discloses the existence of two distinct bands of majority carrier traps in these alloys. The bands were identified as neutral Si dangling bonds and neutral Ge dangling bonds. Our studies show clearly that the Si and Ge defects directly compete with each other during annealing, implying a global reconfiguration mechanism. The creation kinetics reveal the usual t1/3 illumination time dependence for the total deep defect density. However, the individual densities of Si and Ge defects have different time dependencies. The details of the creation and annealing kinetics of Ge and Si defects are used to test predictions of certain defect creation models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A3.3
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977)Google Scholar
[2] Tanaka, K., Maruyama, E., Shimada, T., and Okamoto, H. in Amorphous Silicon 1st Ed. (John Wiley & Sons, Chichester, 1999), p. 194–208 Google Scholar
[3] Zafar, S. and Schiff, E. A., Phys. Rev. B40, 5235 (1989)Google Scholar
[4] Godet, G. and Cabarrocas, P. Roca i, J. Appl. Phys. 80, 97 (1996)Google Scholar
[5] Branz, H. M., Phys. Rev. B59, 5498 (1999)Google Scholar
[6] Stutzmann, M., Jackson, W. B., Tsai, C.-C., Phys. Rev. B32, 23 (1985)Google Scholar
[7] Palinginis, K. C., Cohen, J. D., Yang, J. C., and Guha, S., J. Non-Cryst. Solids, in pressGoogle Scholar
[8] Guha, S., Payson, J. S., Agarwal, S. C., and Ovshinsky, S. R., J. Non -Cryst. Solids 97&98, 1455 (1988)Google Scholar
[9] Brüggemann, R., Main, C., Berkin, J., and Reynolds, S., Philos. Mag. B62, 29 (1990)Google Scholar
[10] Michelson, C. E., Gelatos, A. V., and Cohen, J. D., Appl. Phys. Lett. 47, 412 (1985)Google Scholar
[11] Cohen, J. D. and Kwon, D., J. Non-Cryst. Solids 227–230, 348 (1998)Google Scholar
[12] Except for the earliest times, Nm will be proportional to (dNtot/dt)1/2 to very good accuracyGoogle Scholar