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Critical Review of 1-Particle Models in Electromigration Resistance Change Modeling

Published online by Cambridge University Press:  22 February 2011

J. Niehof
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
H.C. de Graaff
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
A.J. Mouthaan
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
J.F. Verwey
Affiliation:
MESA Research Institute, University of Twente, Dept. of Electrical Engineering, group ICE, P.O. Box 217, 7500 AE Enschede, The Netherlands
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Abstract

An investigation is made into the capability of one-particle models in modeling electromigration-induced resistance changes. Analytically obtained solutions to the model equations are used to gain more insight into the vacancy distribution as a result of the applied boundary conditions. These solutions are then used to determine the resistance change modeling capabilities of three types of one-particle models.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Niehof, J., Graaff, H.C. de, Verwey, J.F. in Materials Reliability in Microelectronics III, edited by Rodbell, K.P., Filter, W.F., Frost, H.J., Ho, P.S. (Mat. Res. Soc. Symp. Proc. 309, Pittsburgh, PA, 1993) pp. 295300.Google Scholar
[2] Marcoux, P.J., Merchant, P.P., Naroditski, V., Rehder, W.D., Hewlett-Packard Journal, June 1989.Google Scholar
[3] Kirchheim, R., Kaeber, U., J. Appl. Phys., 70, 172, 1991.Google Scholar
[4] Madden, M., Marieb, T., Abratowski, E., Flinn, P.A. in Materials Reliability in Microelectronics II, edited by Thompson, C.V., Lloyd, J.R. (Mat. Res. Soc. Proc. 265, Pittsburgh, PA, 1992) pp. 3338.Google Scholar
[5] Lloyd, J.R., Koch, R.H., Proc. IRPS, p. 161, 1987.Google Scholar
[6] Hinode, K., Furusawa, T., Homma, Y., Proc. IRPS, p. 205, 1992.Google Scholar
[7] Niehof, J., Flinn, P.A., Maloney, T.J., Proc. ESREF 92, pp. 359362, 1992.Google Scholar
[8] Möckl, U., Diplom Arbeit Univ. Stuttgart/Max Planck Institute für Metallforschung, 1992.Google Scholar
[9] Niehof, J., PhD Thesis, University of Twente, The Netherlands, to be published October 1994.Google Scholar
[10] Kirchheim, R., Acta metall. mater., Vol 40, No 2, pp. 309323, 1992.Google Scholar
[11] Wolbert, Ph.B.M., PhD Thesis, University of Twente, The Netherlands, 1991.Google Scholar
[12] Simmons, R.O., Balluffi, R.W., Phys. Rev., Vol 117, No 1, 1960.Google Scholar
[13] Liew, B.K., Fang, P., Cheung, N.W., Hu, C., Proc. IRPS, p. 111, 1990.Google Scholar