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Creation of Staebler-Wronski Defects at Low Temperatures

Published online by Cambridge University Press:  01 January 1993

Paul Stradins  and
H. Fritzsche
Paul Stradins
Affiliation:
University of Chicago, The James Franck Institute, Chicago, IL, U.S.A.
H. Fritzsche
Affiliation:
University of Chicago, The James Franck Institute, Chicago, IL, U.S.A.
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Abstract

We extended the kinetics study of light-induced creation of metastable defects in undoped a-Si:H down to T =4.2K. Using band gap light with photocarrier generation rate G0 =3.8x1021cm-3s-1 we find that the change in metastable defect concentration ΔND depends on exposure time te as tme with m = 0.35 ±0.02 at 4.2K, 80K and 300K. The dependence of ΔND on generation rate is G0.44 at 4.2K. The relation between ND and photoconductivity at 300K is nonlinear and not single-valued.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 571
Copyright
Copyright © Materials Research Society 1993

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References

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