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Crack Development in Pulsed Laser-Deposited Pzt Thin Films

Published online by Cambridge University Press:  01 January 1992

H. M. Lee ,
T. J. Chuang ,
C. K. Chiang ,
L. P. Cook  and
P. K. Schenck
H. M. Lee*
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
T. J. Chuang
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
C. K. Chiang
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
L. P. Cook
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
P. K. Schenck
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD.
*
+University of Maryland, College Park, MD
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Abstract

The development of cracks in a PZT thin film prepared by pulsed laser deposition on an unheated Pt-coated silicon substrate, and subsequently crystallized by post-deposition annealing, was investigated as a function of film thickness. As deposited, the film was amorphous. The film was heated at 600°C to produce predominantly ferroelectric crystalline PZT. Spacing, width and morphology of cracks in the film followed a regular progression in which crack area decreased with decreasing film thickness. Data on area shrinkage, as deduced from crack area, were fit equally well as either a linear or a parabolic function of film thickness. It is suggested that crystallization-induced stresses rather than thermal-gradient related stresses, were dominant in the formation of the cracks, and that these stresses were modified by interaction with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 409
Copyright
Copyright © Materials Research Society 1993

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References

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