Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-15T18:56:41.907Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation of Optical Properties and Structural Analysis for Cobalt Silicide Layers Buried in Silicon

Published online by Cambridge University Press:  25 February 2011

C. H. Perry ,
F. Lu ,
F. Namavar  and
H. P. Maruska
C. H. Perry
Affiliation:
Nortkeastern University, Boston, MA 02115
F. Lu
Affiliation:
Nortkeastern University, Boston, MA 02115
F. Namavar
Affiliation:
Spire Corporation, Bedford, MA 017S0
H. P. Maruska
Affiliation:
Spire Corporation, Bedford, MA 017S0
Get access

Abstract

The optical reflectivity from buried and exposed CoSi2 layers produced by Co ion implantation of Si substrates has been measured over the energy range 0.012–6.2 eV (0.2- 100 μm). Both unannealed and annealed layers were investigated. The complex dielectric constant of the bare CoSi2 layer was obtained from a Kramers-Kronig analysis. The plasma frequency, carrier concentration and relaxation time of the buried CoSi2 layers were obtained from classical dispersion analyses of the multicomponent reflectivity data. The effective carrier concentration derived from the optical data and the measured chaneling from Rutherford back scattering correlated with anneal temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 887
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Viguier, C., Cros, A., Humbert, A., Ferrieu, C., Thomas, O., Madar, R. and Senateur, J. P., Solid State Communications 60, 923 (1986).Google Scholar
2. Jimenez, J. R., Wu, Z. -C., Schowalter, L. J., Hunt, B. D., Fathauer, R. W., Grunthaner, P. J., and Lin, T. L., J. Appl. Phys. 66, 2738 (1989).Google Scholar
3. Duboz, J. Y., Badoz, P. A., Henz, J. and von Känel, H., J. Appl. Phys. 68, 2346 (1990).CrossRefGoogle Scholar
4. Wölfel, M., Schulz, M., Ionally, J., and Grunthaner, P.J., Appl. Phys. A 50, 177 (1990).Google Scholar
5. Namavar, F., Kalkhoran, N. M., Manke, J. M., Luo, L., and McGinn, J. T., Mat. Res. Soc. Symp. Proc, 1992 (in press).Google Scholar
6. Weaver, J. H., Colavita, E., Lynch, D. W., and Rosei, R., Phys. Rev. B 19, 3850 (1979).Google Scholar
7. Mattheiss, L. F. and Hamann, D. R., Phys. Rev. B 37, 10623 (1988).CrossRefGoogle Scholar
8. Pirri, C., Peruchetti, J. C., Gewinner, G. and Derrien, J., Phys. Rev. B 29, 3391 (1984).Google Scholar
9. Phillips, J. M., Batstone, J. L., Hensel, J. C., Cerullo, M., Appl. Phys. Lett. 51, 1895 (1987).CrossRefGoogle Scholar