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Correlation of Ingap(001) Surface Structure During Growth and CuptB-Type Bulk Ordering

Published online by Cambridge University Press:  10 February 2011

M. Zorn ,
P. Kurpas ,
A. Bhattacharya ,
M. Weyers ,
J.-T. Zettler  and
W. Richter
M. Zorn
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Str. 11, D-12489 Berlin, Germany
P. Kurpas
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Str. 11, D-12489 Berlin, Germany
A. Bhattacharya
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Str. 11, D-12489 Berlin, Germany
M. Weyers
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Str. 11, D-12489 Berlin, Germany
J.-T. Zettler
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Sekr. PN 6-1, Hardenbergstr. 36, D-10623 Berlin, Germany
W. Richter
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Sekr. PN 6-1, Hardenbergstr. 36, D-10623 Berlin, Germany
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Abstract

The mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2×1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2×4)-like surface dimer configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 217
Copyright
Copyright © Materials Research Society 2000

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References

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