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The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

Published online by Cambridge University Press:  01 February 2011

A. Sekiguchi ,
J. Koike ,
K. Ueoka ,
J. Ye ,
H. Okamura ,
N. Otsuka ,
S. Ogawa  and
K. Maruyama
A. Sekiguchi
Affiliation:
Dept. of Materials Science, Tohoku University, Sendai 980-8579, Japan
J. Koike
Affiliation:
Dept. of Materials Science, Tohoku University, Sendai 980-8579, Japan
K. Ueoka
Affiliation:
Nissan ARC, Ltd., Yokosuka 237-0061, Japan
J. Ye
Affiliation:
Nissan ARC, Ltd., Yokosuka 237-0061, Japan
H. Okamura
Affiliation:
Backend Process Tech. Group, Semiconductor Leading Edge Technologies, Inc. Tsukuba, Ibaraki 305-8569, Japan
N. Otsuka
Affiliation:
Backend Process Tech. Group, Semiconductor Leading Edge Technologies, Inc. Tsukuba, Ibaraki 305-8569, Japan
S. Ogawa
Affiliation:
Backend Process Tech. Group, Semiconductor Leading Edge Technologies, Inc. Tsukuba, Ibaraki 305-8569, Japan
K. Maruyama
Affiliation:
Dept. of Materials Science, Tohoku University, Sendai 980-8579, Japan
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Abstract

Adhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E.3.5
Copyright
Copyright © Materials Research Society 2003

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References

1. Bagchi, A., and Evans, A., Thin Solid Films, 286, 203 (1996).Google Scholar
2. Kriese, M.D., Moody, N. R., andGerberich, W.W., Acta Mater, 46, 6623 (1998).Google Scholar
3. Lane, M., and Dauskardt, R. H., J Mater Res 15, 203 (2000).Google Scholar
4. Lane, M., and Vainchtein, A., Gao, H., and Dauskardt, R.H., J Mater Res, 15, 2758 (2000).Google Scholar
5. Lane, M.W., Snodgrass, J. M., and Dauskardt, R. H., Microelectronic Reliability, 41, 1615 (2001).Google Scholar
6. Holloway, K., and Fryer, P. M., Appl. Phys. Lett, 57, 1736 (1990).Google Scholar
7. Hieber, K., and Mayer, N. M., Thin Solid Film, 90, 43 (1982).Google Scholar
8. Schwartz, N., and Feit, E. D., J. Electrochem. Soc, 124, 123 (1997).Google Scholar
9. Thornton, J. A., and Hoffman, D.W., J. Vac. Sci. Technol, 19, 164 (1977).Google Scholar
10. Jankowski, A. F., Bionta, A. F., and Gabriele, R.M., J. Vac. Sci. Technol, A7, 210 (1989).Google Scholar
11. Schonberg, N., Acta Chem Scandinarica, 8, 199 (1954).Google Scholar
12. Terao, N., J. J. Appl. Phys, 10, 248 (1971).Google Scholar
13.JCPDS No.25-1278, No.25-1280,. No.39-1485, No.49-1283.Google Scholar
14. Sekiguchi, A., Koike, J., and Maruyama, K., to be published.Google Scholar