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Correlation Between Structural and Electronical Properties Of Strained V2O3 Thin Films

Published online by Cambridge University Press:  10 February 2011

H. Schuler ,
S. Klimm  and
S. Horn
H. Schuler
Affiliation:
Lehrstuhl fuer Experimentalphysik II, Institut fuer Physik, Universitaet Augsburg, Memminger Strasse 6, D-86159 Augsburg, horn@physik.uni-augsburg.de
S. Klimm
Affiliation:
Lehrstuhl fuer Experimentalphysik II, Institut fuer Physik, Universitaet Augsburg, Memminger Strasse 6, D-86159 Augsburg, horn@physik.uni-augsburg.de
S. Horn
Affiliation:
Lehrstuhl fuer Experimentalphysik II, Institut fuer Physik, Universitaet Augsburg, Memminger Strasse 6, D-86159 Augsburg, horn@physik.uni-augsburg.de
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Abstract

Epitaxial thin films of V2O3 were grown on c-axis oriented sapphire substrates by reactive e-beam evaporation. The high orientation and epitaxy is shown by low energy electron and x-ray diffraction. The microstucture of the films was investigated by AFM imaging. The measurements show an island growth mode with a temperature dependent increase of the grain size. At a growth temperature of above 700°C a change of the surface structure is observed, which produces much more structured and irregular shaped crystallites. High temperature growth also causes changes in the electronical properties, due to an increased stress in the films as measured by XRD. The metal-insulator transition (MIT) and the properties of the metallic phase of the films were determined mainly by temperature dependent electrical resistivity measurements. The metallic properties are distorted in films grown at low temperature (T<500°C) probably due to defects, dislocations and grain boundaries. Favorable growth conditions for films showing a single crystal like MIT were found in a narrow temperature range around 550°C. For higher growth temperatures (T>650°C) metallic behavior at high temperatures is suppressed by an in plane tensile stress. The electronic properties of such films are similar to those of chromium doped V2O3. The relation between growth conditions, structural properties and resulting electronic properties is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 451
Copyright
Copyright © Materials Research Society 1997

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References

1. Yethiraj, M., J. Sol. State Chem., 88, p.53–69 (1990)Google Scholar
2. Carter, S.A., Yang, J., Rosenbaum, T.F., Spalek, J. and Honig, J.M. Phys. Rev B 43 (1) p. 607–614 (1991)Google Scholar
3. Thomas, G.A., Rapkine, D.H., Carter, S.A., Millis, A.J., Rosenbaum, T.F., Metcalf, P. and Honig, J.M. Phys. Rev. Let. 73 (11) p. 1529–1532 (1994)Google Scholar
4. Garbuzov, D.Z., Zaitsev, S.V., Ptashnik, V.B., Tarasov, I.S. and Chudnivskii, F.A. Sov. Phys. Tech. Phys. 34 (10) p. 1199–1201 Google Scholar
5. Rogers, K.D., Coath, J.A. and Lovell, M.C., J. Appl. Phys. 70 (3) p. 1412–1415 (1991)Google Scholar
6. Leonard, D., Krishnamurthy, M., Reaves, C.M., Denbaars, S.P. and Petroff, P.M. Appl. Phys. Lett. 63 (23) p. 3203–3205 (1993)Google Scholar
7. Schuler, H., Weissmann, G., Renner, C., Six, S., Klimm, S., Simmet, F. and Horn, S. Mat. Res. Soc. Symp. Proc. Vol.401, p.61–66 (1996)Google Scholar
8. Schuler, H., Klimm, S., Weissmann, G., Renner, C. and Horn, S., Thin Solid Films, in pressGoogle Scholar
9. McWhan, D.B., Remeika, J.P., Phys. Rev B, 2 (9) p. 3734–3750 (1970)Google Scholar
10. Kuwamoto, H., Keer, H.V., Keem, J.E., Shivashankar, S.A., Zandt, L.L. van and Honig, J.M. Journal de physique, Colloque C4, 37 (10) p. 35–40 (1976)Google Scholar