Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-29T06:22:35.342Z Has data issue: false hasContentIssue false
  • English
  • Français

Copper-Based Ohmic Contacts For The SiGe/Si Heterojunction Bipolar Transistor (HBT) Structure

Published online by Cambridge University Press:  10 February 2011

K. Das  and
S. A. Alterovitz
K. Das
Affiliation:
Department of Electrical Engineering, Tuskegee University, Tuskegee, AL 36088
S. A. Alterovitz
Affiliation:
NASA Glenn Research Center, 21000 Brookpark Road, Cleveland, OH 44135
Get access

Abstract

A Cu-based metallization scheme has been studied for establishing low resistance contacts for a Si/SiGe/Si heterojunction bipolar transistor (HBT) structure. As-grown doped layers were further implanted with BF2 and As ions for the p-type base and n-type emitter layers, respectively, in order to produce a low sheet resistance surface layer. Contacts were metallized using an e-beam deposited multilayer structure of Ti/Cu/Ti/Al. Specific contact resistances of the order of 10−7 Ω cm2 or lower were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 195
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cressler, J. D., “SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications”, IEEE Transactions on Microwave Theory and Techniques, 46, pp. 572–589, (1998).10.1109/22.668665Google Scholar
2. Sun, S. C., “Process technologies for advanced metallization and interconnect systems”, IEDM Technical Digest, pp. 31.1.1–31.1.4, (1997).Google Scholar
3. Venkatesan, S., et al. “A high performance 1.8 V, 0.20 txm technology with copper metallization”, IEDM Technical Digest, pp. 31.2.1–31.2.4, (1997).Google Scholar
4. Edelstein, D., et al. “Full copper wiring in sub-0.25μm CMOS ULSI technology”, IEDM Technical digest, pp. 31.3.1– 31.3.4, (1997).Google Scholar
5. Rieh, J. S., Lu, L. H., Katehi, L. P. B., Bhattacharya, P., Croke, E. T., Ponchak, G. E., , and Alterovitz, S. A., “X and Ku band amplifiers based on Si/SiGe HBT's and micromachined lumped components”, IEEE Transactions on Microwave Theory and Techniques, MTT–46, pp. 685–694, (1998).Google Scholar
6 Schroder, D. K., “Semiconductor material and device characterization”, John Wiley Sons. Ins., New York, 1990, pp. 116–124.Google Scholar