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Copper Indium Diselenide thin films using a hybrid method of chemical bath deposition and thermal evaporation

Published online by Cambridge University Press:  10 August 2011

R. Ernesto Ornelas A ,
Sadasivan Shaji ,
Omar Arato ,
David Avellaneda ,
Alan Castillo ,
Tushar Kanti Das Roy  and
Bindu Krishnan
R. Ernesto Ornelas A
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, México
Sadasivan Shaji
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, México CIIDIT- Universidad Autónoma de Nuevo León, Apodaca, Nuevo León, México.
Omar Arato
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, México
David Avellaneda
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, México
Alan Castillo
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, México
Tushar Kanti Das Roy
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, México
Bindu Krishnan
Affiliation:
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Nuevo León, México CIIDIT- Universidad Autónoma de Nuevo León, Apodaca, Nuevo León, México.
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Abstract

Copper indium diselenide (CIS) based solar cells are one among the promising thin film solar cells. Most of the processes reported for the preparation of CIS directly or indirectly involve Se vapor or H2Se gases which are extremely toxic to health and environment. In this work, we report the preparation of CIS thin films by stacked layers of Glass/In/Se/Cu2Se and Glass/In/Se/Cu2Se/Se. For this, first indium (In) thin film was thermally evaporated on glass substrate on which selenium (Se) and copper selenide (Cu2Se) thin films were deposited sequentially by chemical bath deposition. Selenium thin films were grown from an aqueous solution containing Na2SeSO3 and CH3COOH at room temperature, triple deposition for 7, 7 and 10 min from consecutive baths. Copper selenide thin films were deposited at 35 °C for 1 hour from an aqueous bath containing CuSO4, Na2SeSO3 and NH4OH. Analysis of the X-ray diffraction patterns of the thin films formed at 400 °C from the precursor layer containing extra selenium layer showed the presence of chalcopyrite CuInSe2, without any secondary phase. Morphology of all the samples was analyzed using Scanning Electron Microscopy. Optical band gap was evaluated from the UV-Visible absorption spectra of these films and the values were 1.1 eV and 1 eV respectively for CIS thin films formed at 400 °C from the selenium deficient and selenium rich precursor layers. Electrical characterizations were done using photocurrent measurements. Thus preparation of a CuInSe2 absorber material by a non-toxic selenization process may open up a low cost technique for the fabrication of CIS based solar cells.

Keywords

photovoltaicthin filmx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d19-02
Copyright
Copyright © Materials Research Society 2011

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