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Copper Film Deposition by Hydrogen Atom Reactions with Copper Compounds

Published online by Cambridge University Press:  25 February 2011

Hongwen Li  and
Robert R. Reeves
Robert R. Reeves
Affiliation:
Rensselaer Polytechnic Institute, Chemistry Department Troy, NY 12180
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Abstract

A novel low temperature CVD process - atom reaction CVD process for metal film depositions has been developed by using hydrogen atoms reacting with metal compounds. High purity copper films, with low resistivity of ∼ 2 μΩ cm, good step coverage to submicron holes and good adhesion to various substrates, were obtained by using this process with Cu(HFA)2 source at substrate temperatures below 150 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 341
Copyright
Copyright © Materials Research Society 1991

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References

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