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Conversion Tunneling in Non-Ideal Schottky Barriers: Virtual Resonance Manifestation and Interface States Influence

Published online by Cambridge University Press:  03 September 2012

D.A. Romanov ,
A.V. Kalameitsev ,
A.P. Kovchavtsev  and
I.M. Subbotin
D.A. Romanov
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia, daroman@isp.nsc.ru
A.V. Kalameitsev
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia, daroman@isp.nsc.ru
A.P. Kovchavtsev
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia, daroman@isp.nsc.ru
I.M. Subbotin
Affiliation:
Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia, daroman@isp.nsc.ru
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Abstract

We have investigated experimentally and theoretically the elastic conversion tunneling of charge carriers in MOS structures Au on p+-InAs with superthin (10-20 Å) oxide film, the structures used in infrared photodetectors. In these structures the Schottky barrier provides near-surface inversion layer. The tunnel current-voltage (I-V) curves obtained at helium temperatures demonstrate the negative differential resistance region (NDR). We develop semiclassical two-band transfer matrix approach to the conversion tunneling analysis in a multilayer structure and calculate on its base the I-V curves dependence on the structure parameters. The NDR occurs to be caused by the motion of the remote quantum level in the inversion layer. The calculated I-V characteristics agree with the experimental ones quite well. The very existence of NDR and the shape of I-V curves depends strongly on the nature of localized electron states at the semiconductor interface. The characteristics of these electron states are used in the calculations as fitting parameters. Therefore, we suggest a new method for the interface states diagnosis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 443
Copyright
Copyright © Materials Research Society 1997

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