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Control of Threshold Voltage on the Excimer Laser Annealed Poly-Si Tfts by Oxygen Plasma Treatment on Poly-Si Surface

Published online by Cambridge University Press:  15 February 2011

Jae-Ik Woo ,
Sang-Gul Lee ,
Dae-Gyu Moon ,
Chan-Hee Hong  and
Hoe-Sup Soh
Jae-Ik Woo
Affiliation:
LCD Research Lab., LG Electronics Inc., Anyang-Shi, Kyongki-Do, 430–080, Korea.
Sang-Gul Lee
Affiliation:
LCD Research Lab., LG Electronics Inc., Anyang-Shi, Kyongki-Do, 430–080, Korea.
Dae-Gyu Moon
Affiliation:
LCD Research Lab., LG Electronics Inc., Anyang-Shi, Kyongki-Do, 430–080, Korea.
Chan-Hee Hong
Affiliation:
LCD Research Lab., LG Electronics Inc., Anyang-Shi, Kyongki-Do, 430–080, Korea.
Hoe-Sup Soh
Affiliation:
LCD Research Lab., LG Electronics Inc., Anyang-Shi, Kyongki-Do, 430–080, Korea.
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Abstract

Oxygen plasma treatment was performed on the excimer laser annealed poly-Si surface, followed by gate oxide deposition with low pressure chemical vapor deposition (LPCVD) in order to control the threshold voltage of excimer laser annealed poly-Si thin film transistors (TFTs).

Threshold voltages of n-channel TFTs increase from 0.4 to 2.8 V by varying the treatment time from 0 to 7 min. It is shown the effective charge density increased toward negative direction with increase of the treatment time.

In addition to the increase of threshold voltage, the oxygen plasma treatment on the Si surface led to an increase in the deposition rate of LPCVD oxide films with an apparent reduction of carbon around the interface between gate insulator and poly-Si film after oxygen plasma treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 423
Copyright
Copyright © Materials Research Society 1996

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References

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