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Control of The Sb Redistribution in Strained SiGe Layers Using Point Defect Injection

Published online by Cambridge University Press:  10 February 2011

A.Yu. Kuznetsovl ,
J. Cardenast ,
J.V. Grahnt ,
B.G. Svensson ,
A. Nylandsted Larsenl  and
J. Lundsgaard Hansen
A.Yu. Kuznetsovl
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
J. Cardenast
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
J.V. Grahnt
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
B.G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
A. Nylandsted Larsenl
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
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Abstract

Sb diffusion in strained Si1−xGex (x = 0.1 and 0.2) layers during nitridation (in NH3, 810 °C) and oxidation (in dry O2, 825 and 900 °C) of Si/Si1−xGex/Si heterostructures is measured and, subsequently, compared with that obtained for treatments in vacuum. An enhancement (ν) or retardation (η) of Sb diffusion in strained Si1−xGex after nitridation/oxidation anneals is detected. For example, 810 (NH3) and 900 °C (O2) anneals results in ν ∼ 2 and η ∼ 0.15 in strained Si0.9Ge0.1, respectively. The retardation of Sb diffusion is attributed to the injection of excess self-interstitials (I) and strongly indicating low interstitialcy fraction of Sb diffusion in strained Si1−xGex. The enhancement of Sb diffusion may be due to direct injection of vacancies (V), but only if the V diffusivities are significantly different in Si and Si1−xGex, or depletion of I in the strained Si1−xGex layers caused by the excess V concentration at the top surface of silicon layer

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 119
Copyright
Copyright © Materials Research Society 1998

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