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Control of the Microstructure of Al Metallization by Graphoepitaxy

Published online by Cambridge University Press:  15 February 2011

Marc J.C. Van Den Homberg ,
P.F.A. Alkemade ,
J.L. Hurd ,
G.J. Leusink  and
S. Radelaar
Marc J.C. Van Den Homberg
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
P.F.A. Alkemade
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
J.L. Hurd
Affiliation:
IBM Analytical Services Group, 1580 Route 52, Hopewell Junction, NY 12542
G.J. Leusink
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
S. Radelaar
Affiliation:
DIMES/NF, Faculty of Applied Physics, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
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Abstract

Microstructure is an important factor determining the lifetime of Al metallization lines. Deposition conditions, substrate material, alloying elements, and anneal treatments are the key parameters that influence microstructure. In this work we explore the use of graphoepitaxy as a tool for additional control over the grain structure of metallization lines. Onto a submicrometer topography in SiO2 (viz., a large number of parallel grooves), a pure Al film is grown by dc magnetron sputtering, followed by an in situ rapid thermal anneal. The topography of the annealed Al is investigated by cross section SEM. It is observed that if it is heated up to its melting point, Al fills the grooves and leaves the ridges between the grooves uncovered. X-Ray Diffraction, TEM, and Backscatter Kikuchi Diffraction are used to determine the global as well as the local crystallographic orientation of the grains in the quenched aluminum. The analyses are performed for various anneal and cool down treatments. Depending on the treatment, the Al lines in the grooves are either polycrystalline with an almost perfect (111) texture, or single crystalline but with a gradual change of 0.067°/μm in orientation. In the latter case, there is no preferred orientation. The single crystalline Al lines will be used as a starting point for the fabrication of model systems for fundamental electromigration studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 397
Copyright
Copyright © Materials Research Society 1995

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