Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-16T22:43:36.292Z Has data issue: false hasContentIssue false

Control of Silicon Nanocrystallite Luminescence Behavior Through Surface Treatments

Published online by Cambridge University Press:  15 February 2011

A. A. Seraphin
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
S.-T. Ngiam
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
K. D. Kolenbrander
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

The visible photoluminescence from thin films of silicon nanocrystallites produced by a pulsed laser ablation supersonic expansion source has been studied to determine the role of particle surface and size in the emission behavior. Variation of nanocrystallite size and surface through a variety of chemical treatments and processing steps has shown that the visible emission can be explained using only a simple quantum confinement model. Particle size has been reduced through a series of acid etch and reoxidation cycles and compared to sample emission wavelength. The role of surface species in determining emission behavior has been studied by chemically altering the surfaces and comparing their surface properties as determined by x-ray photoelectron spectroscopy to their photoluminescence behavior. Nanocrystallite size controls the emission energy, while surface passivation only determines emission intensity, through control of excited carrier recombination pathways.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Chiu, L.A., Seraphin, A.A., and Kolenbrander, K.D., J. Electron. Mater. 23, 347 (1994).Google Scholar
3. Prokes, S.M., Glembocki, O.J., Bermudez, V.M., Kaplan, R., Fridesdorf, L.E., Searson, P.C., Phys. Rev. B 45, 13788 (1992).Google Scholar
4. Prokes, S.M. and Carlos, W.E., J. Appl. Phys. 78, 2671 (1995).Google Scholar
5. Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F., and Lehmann, V., Appl. Phys. Lett. 61, 943 (1992).Google Scholar
6. Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.-H., Harris, T.D., and Citrin, P.H., Appl. Phys. Lett. 62, 1934 (1993).Google Scholar
7. Koch, F., Petrova-Koch, V., Muschik, T., Nikolov, A., and Gavrileno, V., Mater. Res. Soc. Proc. 283, 197 (1993).Google Scholar
8. Fauchet, P.M., Ettedgui, E., Raisanen, A., Brillson, L.J., Seiferth, F., Kurinec, S.K., Gao, Y., Peng, C., and Tsybeskov, L., Mater. Res. Soc. Proc. 283, 271 (1993).Google Scholar
9. Lauerhaas, J.M. and Sailor, M.J., Science 261, 1567 (1993).Google Scholar
10. Werwa, E., Seraphin, A.A., Chiu, L.A., Zhou, Chuxin, and Kolenbrander, K.D., Appl. Phys. Lett. 64, 1821 (1994).Google Scholar
11. Glass, J.A., Wovchko, E.A., and Yates, J.T., Surf. Sci. 338, 125 (1995).Google Scholar
12. Rehm, J.M., McLendon, G.L., Tsybeskov, L., and Fauchet, P.M., Appl. Phys. Lett. 66, 3669 (1995).Google Scholar
13. Schechter, I., Ben-Chorin, M., and Kux, A., Anal. Chem. 67, 3727 (1995).Google Scholar
14. Suzuki, E., Okamoto, M., and Ono, Y., Sol. St. Ionics 47, 97 (1991).Google Scholar
15. M'Saad, H., Michel, J., Lappe, J.J., and Kimerling, L.C., J. Electron. Mater. 23, 487 (1994).Google Scholar