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Control of Radiation Induced Defects of Pure Silica Fiber Prepared by VAD Process

Published online by Cambridge University Press:  25 February 2011

K. Muta
Affiliation:
Showa Electric Wire & Cable Co., Ltd., Minamihashimoto, Sagamihara-shi 229
A. Kashiwazaki
Affiliation:
Showa Electric Wire & Cable Co., Ltd., Minamihashimoto, Sagamihara-shi 229
M. Kohketsu
Affiliation:
Department of Inorganic Materials, Tokyo Institute of Technology, Ohkayama, Meguro-ku, Tokyo 152 Japan
H. Kawazoe
Affiliation:
Department of Inorganic Materials, Tokyo Institute of Technology, Ohkayama, Meguro-ku, Tokyo 152 Japan
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Abstract

The γ-induced centers in SiO2 glass such as the Si-E' center and OHC were found to be effected by the atmosphere present during melting. In the case of the VAD process, a porous preform rod is sintered to fabricate a transparent preform rod. The generation of defect species could be easily controlled by controlling the atmosphere of the sintering process. Only small amounts of OHC are generated in fibers sintered in Cl2 or H2 atmospheres, and most of the OHC is recovered at room temperature. This indicates the possibility of making fibers which are highly resistant to irradiation. The correlation between the γ-induced loss increase and the formation of these defects was examined.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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