Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-07-01T16:38:32.904Z Has data issue: false hasContentIssue false
  • English
  • Français

The Control of Epitaxial Growth of LiNbO3 Thin Films on R-Cut Sapphire

Published online by Cambridge University Press:  25 February 2011

Norifumi Fujimura ,
Masami Kakinoki  and
Taichiro Ito
Norifumi Fujimura
Affiliation:
University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
Masami Kakinoki
Affiliation:
Graduate School, University of Osaka Prefecture
Taichiro Ito
Affiliation:
University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
Get access

Abstract

It is argued that epitaxial films of ionically-bonded materials are more easily achieved than of covalently bonded materials. Good epitaxy can be achieved despite relatively large lattice mismatch with respect to the substrate. However, the strong influence of interfacial energy can result in difficulty in controlling the orientation of epitaxial films.

The crystallographic orientation of ionically-bonded LiNbO3 films was therefore studied. Growth orientation could be controlled by paying attention to the bonding between octahedra in the structure, and to the formation of the octahedra containing lithium and niobium ions. Lithium concentration could be increased by increasing the rf power, 02 partial pressure and total gas pressure, and decreasing the substrate temperature during deposition.

The orientation of the film changed from (012) to (100) via (110) by increasing the Li concentration in the film. The (012) and (100) films were epitaxial with respect to the substrate. In particular, the (100) films were of exce lent quality, being single crystalline with smooth surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 545
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fujimura, N., Nishihara, T., Goto, S. and Ito, T., submitted in J. Appl. Phys.Google Scholar
2.For example, Foster, N. F., J. Appl. Phys. 40, (1969), 420.Google Scholar
3. Kakinoki, M., Fujimura, N., Ando, K. and Ito, T., J. Japan Soc. of Powder and Powder Metallurgy, 37 (1990), 17, in Japanese.Google Scholar
4. Fujimura, N., Kakinoki, M. and Ito, T., accepted in J. Crystal Growth.Google Scholar
5. Hahm, T., International Tables for Crystallography, Vol. A: Space-Group Symmetry, second revised edition, p. 522. (Kluwer Academic Publisher, Boston, London, 1989).Google Scholar
6. Abrahams, S. C., Reddy, J. M., and Bernstein, J. L., J. Phys. Chem. Solids, 27, (1966), 997.Google Scholar
7. Abrahams, S. C., Hamilton, W. C., and Reddy, J. M., J. Phys. Chem. Solids, 27, (1966), 1013.Google Scholar