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Control of Amorphous Silicon Crystallization Using Germanium Deposited by Low Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

Masato Toita ,
Pranav Kalavade  and
Krishna C. Saraswat
Masato Toita
Affiliation:
Asahi Kasei Microsystems Co. Ltd., Tokyo 151-0053, JAPAN
Pranav Kalavade
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4070
Krishna C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4070
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Abstract

Crystallization behavior of 100nm amorphous silicon film with and without a 160nm poly-Ge layer on top was investigated. Ge was observed to increase the nucleation rate as well as to increase the incubation time for nucleation in a-Si. Activation energy for nucleation was 2.3eV for Ge-covered Si films as compared to 2.7eV for the control a-Si films with no poly-Ge. Activation energy for incubation is almost unchanged for both the films (-3.3eV). An alternative seeding technique for a-Si films using the increase in the incubation time for nucleation due to presence of poly-Ge is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A9.5
Copyright
Copyright © Materials Research Society 2000

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References

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