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The Contribution of Beam Processing to Present and Future Integrated Circuit Technologies

Published online by Cambridge University Press:  15 February 2011

C Hill*
Affiliation:
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Caswell, Towcester, Northants. NN12 8EQ, England
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Abstract

A brief history and present state of beam processing techniques and applications to silicon integrated circuit technology are given. The viability of incorporating pulse-laser controlled doping profiles into the emitter-base structure of an advanced bipolar transistor is discussed. The areas of present I.C. technology which will constrain future device development are identified, and the contribution that beam processing can make in removing these constraints is discussed. The beam processing techniques most likely to be found in future I.C. technologies are described.

Type
Research Article
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1.Laser-Solid Interactions and Laser-Processing (Ferris, S D, Leamy, H J, Poate, J M eds) A.I.P. New York (1979)Google Scholar
2.Laser and Electron-Beam Processing of Materials (White, C W, Peercy, P S eds) Academic Press New York (1980)Google Scholar
3.MRS Symposia Proceedings volumes 1 (1981), 4 (1982), _, (1983) North-Holland New YorkGoogle Scholar
4.Semiconductor Characterisation Techniques (Barnes, P A, Rosgonyi, G A eds) 466–526 E.C.S. Princeton N.J. (1978)Google Scholar
5.Laser and Electron Beam Processing of Electronic Materials (Anderson, C L, Celler, G K, Rosgonyi, G A eds) ECS Pennington N.J. (1980)Google Scholar
6.Kirkpatrick, A R, Minucci, J A, Greenwald, A CIEEE Trans. Elec. Devices ED24 429 (1977)Google Scholar
7.McMahon, R A and Ahmed, HElectronics Letts. 15 No. 245 (1979)Google Scholar
8.Hodgson, R T, Baglin, J E E, Pal, R, Neri, J M, Hammer, DAppl. Phys. Letts. 37 187 (1980)Google Scholar
9.Cohen, R L, Williams, J S, Feldman, L C, Wost, K WAppl. Phys. Letts. 33 751 (1978)Google Scholar
10.Nishiyama, K, Arai, M, Watanade, NJap. J. Appl. Phys. 19 L563 (1980)Google Scholar
11.Fulks, R T, Russo, C J, Hanley, P R, Kamins, T IAppl. Phys. Lett. 39 609 (1981)Google Scholar
12.Hill, C ref. 3 1 361 (1981)Google Scholar
13.Hill, C in Laser Annealing of Semiconductors (Poate, J. M., Mayerl, James W. eds) 479558Academic Press New York (1982)Google Scholar
14.Hill, C, Butler, A L, Daly, J A in ref. 3 4 579584 (1982)Google Scholar
15.Benton, J L, Doherty, C J, Ferris, S D, Kimerling, L C, Leamy, H J, Celler, G K, Ref. 2 430 (1980)Google Scholar
16.Miyao, M, Koyanagi, M, Tamura, H, Hashimoto, N, Tokuyama, T, Jap. J. Appl. Phys. 19–1 129 (1980)Google Scholar
17.Hill, C in ref. 5 26 (1980)Google Scholar
18.Geis, M W, Smith, H I, Tsaur, B Y, Fan, J C C, Silversmith, D J, Mountain, R W, Chapman, R L this volume (1983)Google Scholar
19.Graul, J, Glasl, A, Murrman, H, 450 IEEE J. Sol. State Circuits SC–11 491 (1976)Google Scholar
20.Shannon, J M In Nuclear Instruments and Methods Section 5 North Holland New York (1980)Google Scholar
21.McMahon, R A, Ahmed, H, Speight, J D, Dobson, R M, ref.5 130 (1980)Google Scholar
22.Speight, J D, Glaccum, A E, Machin, D, McMahon, R A, Ahmed, H, ref. 3 1 383 (1981)Google Scholar
23.Gat, A and Gibbons, J FAppl. Phys. Letts. 32 142 (1978)Google Scholar
24.Hess, L D, Kokorowski, S A, Olson, G L, Chi, Y M, Gupta, A, Valdez, J B, Ref.3 4 633 (1982)Google Scholar
25.Eggermont, G E J, Allison, D F, Gee, S A, Ritz, K N, Falster, R J, Gibbons, J F, Ref.3 4 615 (1982)Google Scholar
26.Gat, A, Gibbons, J F, Magee, T J, Peng, J, Williams, P, Deline, V, Evans, C AJr. Appl. Phys. Lett. 33 389 (1978)Google Scholar
27.Pollard, C J, Glaccum, A E, Speight, J D Ref.3 4 789 (1982)Google Scholar
28.Benton, J L, Celler, G K, Jacobson, D C, Kimerling, L C, Lischner, D J, Miller, G L, Robinson, McD Ref.3 4 765 (1982)Google Scholar