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A Continuum Approach to Two-Component Thin Film Growth

Published online by Cambridge University Press:  10 February 2011

Yi-Kug Yu  and
Luc T. Wille
Yi-Kug Yu
Affiliation:
Department of Physics, Florida Atlantic University, Boca Raton, FL 33431yyu@fau.edu
Luc T. Wille
Affiliation:
Department of Physics, Florida Atlantic University, Boca Raton, FL 33431willel@Qfau.edu
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Abstract

Theoretical effort so far in understanding epitaxial growth has focused mainly on the one-component growth, i.e. growth that can be fully characterized by a surface (or height) profile. The predictions are also quite limited to the height-height correlation functions as a function of substrate size and the amount of deposition. In this paper, we consider the case of a two-component growth which is quite common in metallic thin films. Instead of using large-scale simulation, we first write down the appropriate two-component growth equations in continuum form. These equations are carefully designed such that in the limit of one-component growth the corresponding equation is recovered. Analytical and numerical analysis of the proposed equations allow us to study the long-range physics associated with these growth processes. Comparison with computer growth experiments is also mentioned.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 528: Symposia AA – Mechanisms & Principals of Epitaxial Growth in Metallic Systems , 1998 , 83
Copyright
Copyright © Materials Research Society 1998

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