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A Continuous Heterogeneous Model for the Crystalline to Amorphous Transition in Ion Implanted Semiconductors : Relationship to the “Critical Damage Energy Density” Model

Published online by Cambridge University Press:  15 February 2011

C. Vieu ,
A. Claverie ,
J. Faure  and
J. Beauvillain
C. Vieu
Affiliation:
LMM/CNRS, 196 avenue H. Ravera, 92220 Bagneux, France
A. Claverie
Affiliation:
Lawrence Berkeley Laboratory, 1 cyclotron road, Barkeley CA 94720, USA CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
J. Faure
Affiliation:
Laboratoire de Microscopie Electronique, 21 rue C. Ader 51100
J. Beauvillain
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
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Abstract

A method is presented for calculating amorphization doses of ion implanted semiconductors, based on a continuous heterogeneous description of damage accumulation. This new approach is compared to the classical “critical damage energy density” (CDED) model. For high dose implantations the equivalence of both descriptions is formally established. It is proposed that the main limitation of the CDED model lies in the linear additivity of damage rather than the homogeneous damage build-up.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 165
Copyright
Copyright © Materials Research Society 1992

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References

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