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Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride

Published online by Cambridge University Press:  11 February 2011

Brett A. Hull ,
Suzanne E. Mohney ,
Uttiya Chowdhury ,
Russell D. Dupuis ,
David Gotthold ,
Ronald Birkhahn  and
Milan Pophristic
Brett A. Hull
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Suzanne E. Mohney
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
Uttiya Chowdhury
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
Russell D. Dupuis
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712
David Gotthold
Affiliation:
Emcore Corporation, Somerset, NJ 08873
Ronald Birkhahn
Affiliation:
Emcore Corporation, Somerset, NJ 08873
Milan Pophristic
Affiliation:
Emcore Corporation, Somerset, NJ 08873
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Abstract

Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with pc = 1.8 (± 1.1) x 10−3 Ωcm2, but only following annealing at 850°C. For the Pd, Au, and Pt contacts annealed at greater than 700°C, a rapid degradation in the current-voltage curves was observed upon testing. The degradation was induced by exposure to sub-bandgap light and was reversed with a mild anneal at 500°C. Possible mechanisms for the degradation are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L12.2
Copyright
Copyright © Materials Research Society 2003

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References

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