Hostname: page-component-848d4c4894-p2v8j Total loading time: 0 Render date: 2024-05-08T22:39:07.168Z Has data issue: false hasContentIssue false
  • English
  • Français

Confocal Micro-Raman Characterization of SiC Epilayers

Published online by Cambridge University Press:  10 February 2011

Ran Liu
Ran Liu*
Affiliation:
Process & Materials Characterization Laboratory, Motorola, Inc., 2200 W. Broadway Rd., Mesa, AZ 85202
Get access

Abstract

The large visible optical penetration depth makes it difficult to isolate the Raman signals of SiC epilayers from those of the substrates such as SiC, sapphire and Si when visible laser lines are used. In this work, confocal micro-Raman was used to characterize 3C, 4H and 6H SiC layers on different substrates with enhanced lateral resolution (˜ 0.8 μm) and depth resolution (˜ 2 μm). Both lateral and depth variation of the free electron concentration and scattering time were measured from n− SiC epi layers on n+ SiC substrates and from H+ implanted SiC. A defect mode induced by oxidation process was also analyzed as function of the depth and the lateral position.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 233
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Feldman, D.W., Parker, J.H., Jr. Choyke, W.J., and Patrick, L., Phys. Rev. 170, 787(1968).Google Scholar
2. Feldman, D.W., Parker, J.H., Jr. Choyke, W.J., and Patrick, L., Phys. Rev. 173, 698(1968).Google Scholar
3. Klein, M.V., Ganguly, B.N., and Colwell, P.J., Phys. Rev. B 6, 2380(1972).Google Scholar
4. Varma, A.R. and Krishna, P., Polymorphism and Polytypism in Crystals, (John Wiley & Sons, Inc., New York, 1966).Google Scholar
5. Nakashima, S. and Hangyu, M., Solid State Commun. 80, 21(1991).Google Scholar
6. Yoshida, S., Properties of Silicon Carbide, (INSPEC, London, 1995), p. 69.Google Scholar
7. Tiwald, T.E., Woollam, J.A., Zollner, S., Christiansen, J., Gregory, R.B., Wetteroth, T., Wilson, S.R., and Powell, A.R., Phys. Rev. B 60, 11464(1999).Google Scholar