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Conduction Mechanisms in SrTiO3 Thin Films on Silicon

Published online by Cambridge University Press:  11 February 2011

Bogdan Mereu ,
George Sarau  and
Marin Alexe
Bogdan Mereu
Affiliation:
Max Planck Institute of Microstructure Physics, Halle, Germany National Institute for Material Physics, Bucharest-Magurele, Romania
George Sarau
Affiliation:
National Institute for Material Physics, Bucharest-Magurele, Romania
Marin Alexe
Affiliation:
Max Planck Institute of Microstructure Physics, Halle, Germany
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Abstract

New materials with high dielectric constant are currently being explored to replace silicon dioxide as gate dielectric for device scaling below 0.1 μm. With respect to conventional SiO2, these high permittivity dielectrics provide the required equivalent oxide thickness (EOT) without of further reduction of the insulator physical thickness, which is a key issue to limit gate leakage current and to maintain comparable MOSFET operation and reliability. The present paper presents preliminary results on conduction mechanisms in thin epitaxial SrTiO3 films grown by MBE on Si (100). I-V measurements were performed on Al/STO/Si structures at temperatures ranging from 40 K to 290 K. At temperatures lower than 100 K the conduction mechanism of electrons from gate electrode across the oxide barrier neither Schottky emission nor tunneling. For temperatures higher than 100 K Schottky emission occurs and barrier heights were extracted, showing an approximate linearly increase with temperature. In case of Si/STO interface, a Fowler-Nordheim tunneling mechanism was detected at 40 K and at intermediate fields. The extracted barrier heights are: 0.07 eV at Si/STO interface and from 0.26 eV (130 K) to 0.53 eV (290 K) at Al/STO interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , T7.5/N9.5
Copyright
Copyright © Materials Research Society 2003

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References

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