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Conduction Mechanisms In Crystallized Silicon Films On Molybdenum Substrates

Published online by Cambridge University Press:  15 February 2011

J. Palmer ,
J. Yi ,
R. Wallace  and
W. Anderson
J. Palmer
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Center for Electronic and Electro-Optic Materials, 215 Bonner Hall, Buffalo, NY 14260
J. Yi
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Center for Electronic and Electro-Optic Materials, 215 Bonner Hall, Buffalo, NY 14260
R. Wallace
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Center for Electronic and Electro-Optic Materials, 215 Bonner Hall, Buffalo, NY 14260
W. Anderson
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Center for Electronic and Electro-Optic Materials, 215 Bonner Hall, Buffalo, NY 14260
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Abstract

Hydrogenated Amorphous silicon films deposited on molybdenum sheet metal substrates have been crystallized by thermal annealing at 850°C for 4 hours in a nitrogen atmosphere. X-ray diffraction and scanning electron microscopy results indicated that the average grain size in the crystallized films was approximately 200A. Palladium contacts were fabricated and the resulting Pd/Si/Mo structures were electrically characterized. Current-voltage-temperature measurements for phosphorus doped and undoped annealed samples resulted in a J “V characteristic consistent with space-charge-limited current. Using this data, Mobility as a function of temperature from 100K-300K was obtained. In phosphorus doped samples, the mobility appeared to be limited by energy barriers at the grain boundaries. In undoped samples, a σ “T’ exp (-b/T’) temperature dependence consistent with variable-range hopping conduction was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 695
Copyright
Copyright © Materials Research Society 1994

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