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A Concentric Circular Type in-situ Vacuum Sealed Lateral Feas Employing E-Beam Evaporator

Published online by Cambridge University Press:  14 March 2011

Moo-Sup Lim
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., San 56-1, Shilimdong, Seoul, 151-742, Korea
Min-Koo Han
Affiliation:
Dep. of molecular Sci. and Tech., Ajou Univ., Suwon 442-749, Kyung-ki do, Korea
Yearn-Ik Choi
Affiliation:
Dep. of molecular Sci. and Tech., Ajou Univ., Suwon 442-749, Kyung-ki do, Korea
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Abstract

In this paper, we propose concentric circular lateral field emitter structure which is more sstable in fabricating and maintaining vacuum conditions. The new FEAs have concentric circular shape while our previous FEAs are stripe type. The anode is formed at inner circle and the cathode is outer circle respectively. We use Molybdenum or Silicon dioxide as a sealing material. After we fabricating tips, Molybdenum or Silicon dioxide is deposited with e-beam evaporator at base pressure of 3.5×10−6Torr. In this process, the micro-cavity remains vacuum cavity without filling Molybdenum or oxide due to step coverage of evaporation. It should be noted that the vacuum level of the micro-cavity can be identical to the base pressure of the e-gun evaporator chamber. All of the two types of new FEAs show good reproducibility in fabricating and maintaining vacuum conditions. Field emitter structure that the anode is located at inner circle shows superior field emission characteristics. The measurements of long term stability for the anode current show that oxide is the most promising material for in-situ vacuum sealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Brodie, I. and Schwoebel, P. R., Proceeding of IEEE, Vol. 82, No. 7, pp 1006, July (1996)Google Scholar
2. Utsumi, Takao, IEEE Trans. Electron Devices, Vol. 38, No. 10, pp. 2276(1991)Google Scholar
3. Spint, C. A., Holland, C. E., Rogengreen, A., and Brodie, I., IEEE Trans. Electron Devices, Vol. 38, No. 10, pp. 2355(1991)Google Scholar
4. Han, J. I., Kwak, M. G., and Park, Y. K., Proceeding of IVMC'97, pp706(1997)Google Scholar
5. Kwon, S. J., Ryu, K. S., Cho, T. H., and Lee, J. D., Proceeding of IVMC'98, pp55(1998)Google Scholar
6. Park, C. M., Lim, M. S., and Han, M. K., IEEE Electron Device Letters, vol. 18, no. 11, November, pp. 538 (1997)Google Scholar