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Concentration Dependence of Boron-Interstitial Cluster (BIC) Formation in Silicon-on-Insulator (SOI)

Published online by Cambridge University Press:  17 March 2011

A. F. Saavedra ,
K. S. Jones ,
L. Radic ,
M. E. Law  and
K. K. Chan
A. F. Saavedra
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL
L. Radic
Affiliation:
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL
M. E. Law
Affiliation:
Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL
K. K. Chan
Affiliation:
IBM Semiconductor Research and Development Center, T.J. Watson Research Center, Yorktown Heights, NY
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Abstract

The effect of boron concentration on boron-interstitial cluster (BIC) dissolution was studied in separation by implantation of oxygen (SIMOX) and SOITEC silicon-on- insulator (SOI) materials. SOI substrates having surface silicon thickness of 750 Å and 1450 Å were ion implanted with 11B+ at a energy of 15 keV. The dose of the implant was varied from 3×1014 cm−2 to 1×1015 cm−2 to provide different boron peak concentrations. Anneals were performed at 825 °C in a nitrogen ambient using RTA for short times and furnace anneals for longer times. The retained dose of boron in the surface silicon layer was estimated using simulations from UT-Marlowe 5.0. Hall Effect was used to measure the sheet resistance, mobility, sheet number, and fraction of active boron. At lower concentrations, SOI exhibited significantly lower sheet numbers. As the boron concentration was increased SOI began to approach bulk Si. However, degraded mobility and sheet resistance was observed at all concentrations. Truncating the boron profile over the surface Si/buried oxide interface enhanced the fraction of active boron in the 750 Å SOI. This also lead to a higher fractional activation in 750 Å SOI than bulk Si as the concentration increased due to a loss of interstitials, effectively reducing the BIC population.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C8.11
Copyright
Copyright © Materials Research Society 2004

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References

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