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Computer Simulations on the Grain Boundary Grooving and Cathode Edge Displacement in Bamboo-like Metalic Interconnects

Published online by Cambridge University Press:  01 February 2011

Tarik Omer Ogurtani  and
Oncu Akyildiz
Tarik Omer Ogurtani
Affiliation:
ogurtani@metu.edu.tr, Middle East Technical University, Metallurgical and Materials Engineering, Middle East Technical University, Ankara, N/A, 06531, Turkey
Oncu Akyildiz
Affiliation:
e109641@metu.edu.tr, Middle East Technical University, Metallurgical and Materials Engineering, Ankara, N/A, N/A, Turkey
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Abstract

The process of grain boundary (GB) grooving and cathode edge displacement in sandwich type thin film bamboo lines are simulated by introducing a new mathematical model. In the absence of the electric field, the computer studies on the triple junction kinetics show that it obeys the first order reaction kinetics at early transient stage, which is followed by the familiar time law as t^1/4, at the steady state regime. The applied electric field (EF) in constant current experiments modifies this time law drastically above the well-defined electron wind intensity (EWI) threshold, and puts an upper limit for the groove depth, which decreases monotonically with EWI. Below the threshold level, the capillary regime predominates, and EF has little effect on the general kinetics of GB grooving, other then the linear increase in total elapsed time with EWI.

Keywords

metallic conductormorphologysimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-22
Copyright
Copyright © Materials Research Society 2006

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References

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