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Computer Simulation of Stress Distribution in Amorphous SiO2 Thin Films

Published online by Cambridge University Press:  10 February 2011

Y. Kogure  and
M. Doyama
Y. Kogure
Affiliation:
Teikyo University of Science & Technology, Uenohara, Yamanashi 409-01, Japan
M. Doyama
Affiliation:
Teikyo University of Science & Technology, Uenohara, Yamanashi 409-01, Japan
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Abstract

A molecular dynamics simulation of amorphous SiO2 thin films has been made to investigate the structure and internal stress. The atomic configuration of the amorphous structure is investigated through the radial distribution function and the distribution of Si-O-Si bond angles. Distribution of internal stress through the specimen is evaluated from the volume and the shape of the SiO4 tetrahedron, which is the elementally unit of amorphous SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 553
Copyright
Copyright © Materials Research Society 1998

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References

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