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Computational Simulation of Photoluminescence and Reflectivity Spectra of a Strained Layer Superlattice

Published online by Cambridge University Press:  15 February 2011

M. Di Blasio  and
M. Averous
M. Di Blasio
Affiliation:
Université Montpellier II, Groupe d'Etude des Semiconducteur, URA 357 du CNRS, CC 074, Place E. Bataillon, 34095 Montpellier Cedex 5, France.
M. Averous
Affiliation:
Université Montpellier II, Groupe d'Etude des Semiconducteur, URA 357 du CNRS, CC 074, Place E. Bataillon, 34095 Montpellier Cedex 5, France.
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Abstract

Powerful mathematical tools have made it possible to simulate the optical spectra of strained layer superlattices. The results of these calculations are compared to experimental ones obtained on ZnS-ZnSe SLSs. The photoluminescence spectra is dominated by a single major peak with a long asymmetrical tail end or a secondary peak at lower energies. This secondary peak or tail end is attributed to the disorder within the superlattice. The PL spectra is simulated using a novel model based on the following parameters; the free exciton energy, the strain/stress state between the lattice constants, the probability of an occurrence of a dislocation, the probability that the dislocation generates and propagates and the critical thickness. The reflectivity simulation is also novel and is based on an impedance in a spatial dispersion model. It is essential to consider the strain that is induced in the SL, when the dielectric constant is dependent on the variation of the frequency near the fundamental transition energies. As a result only normal incidence is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 241
Copyright
Copyright © Materials Research Society 1995

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References

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