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Composition Dependence of Crystallization of Co-Si Alloys

Published online by Cambridge University Press:  25 February 2011

Q. Z. Hong ,
K. Barmak  and
L. A. Clevenger
Q. Z. Hong
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
K. Barmak
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
L. A. Clevenger
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The composition dependence of crystallization of amorphous Co-Si alloys has been investigated. Crystallization temperature decreased slowly from 400°C for a Co0.42Si0.58 alloy to 300°C for a CO0.2Si0.8 alloy. However, abrupt decrease in the crystallization temperature was observed for alloys with the monosilicide and disilicide compositions. The crystallization of alloys compositionally close to the disilicide was a one-step process with an activation energy of about 1.3 eV. The heat release and the volume contraction during crystallization of the stoichiometric Co0.33Si0.67 alloy were measured to be 0.118 eV/atom and 0.6%, respectively. In the case of the CO0.2Si0.8 alloy, complete crystallization was achieved in two steps with an activation energy of 2.1 eV for the primary crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 175
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Probst, V., Schaber, H., Mitwalsky, A., and Kabza, H., Van den hove, L., and Maex, K., J. Appl. Phys. 70, 708 (1991).CrossRefGoogle Scholar
2. Sorimachi, Y., Ishiwara, H., Yamamoto, H., and Furukawa, S., Jpn. J. of Appl. Phys. 21, 752 (1982).CrossRefGoogle Scholar
3. Kissinger, H., Anal. Chem. 29, 1702 (1957).CrossRefGoogle Scholar
4. Nicolet, M. -A. and Lau, S. S., in VLSI Electronics, edited by Einspruch, N. G. and Larrabee, G. B. (Academic, New York, 1983), Vol. 6, p. 330.Google Scholar
5. Buschow, K. H. J., Solid State Commun. 43, 171 (1982).CrossRefGoogle Scholar
6. Koster, U., Herold, U., in Glassy Metals I, edited by Guntherodt, H. -J. and Beck, H., (Springer-Verlag, 1981), p. 225.CrossRefGoogle Scholar