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Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

Published online by Cambridge University Press:  21 February 2011

R. Valizadeh ,
J.S. Colligon ,
S.E. Donnelly ,
C.A. Faunce ,
D. Park  and
H. Kheyrandish
R. Valizadeh
Affiliation:
The Centre for Thin Film and Surface Research, University of Salford, M5 4WT, Uk
J.S. Colligon
Affiliation:
The Centre for Thin Film and Surface Research, University of Salford, M5 4WT, Uk
S.E. Donnelly
Affiliation:
The Centre for Thin Film and Surface Research, University of Salford, M5 4WT, Uk
C.A. Faunce
Affiliation:
The Centre for Thin Film and Surface Research, University of Salford, M5 4WT, Uk
D. Park
Affiliation:
The Centre for Thin Film and Surface Research, University of Salford, M5 4WT, Uk
H. Kheyrandish
Affiliation:
MATS, Wavertree Blvd South, Wavertree Technology Park, Liverpool L7 1PG, UK
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Abstract

The growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at. %, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes l-15nm which depend on the nitrogen content and the deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 81
Copyright
Copyright © Materials Research Society 1995

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