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Composition and Structure of SiCx:H Films Formed by Plasma Immersion ION Implantation From A Methane Plasma

Published online by Cambridge University Press:  17 March 2011

K. Volz ,
Ch. Klatt  and
W. Ensinger
K. Volz
Affiliation:
Materials Science Center, Philipps-University, 35032 Marburg, Germany; volz@mailer.uni-marburg.de
Ch. Klatt
Affiliation:
Max-Planck Institute for Nuclear Physics, 69120 Heidelberg, Germany
W. Ensinger
Affiliation:
Materials Science Center, Philipps-University, 35032 Marburg, Germany
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Abstract

Hydrocarbon ions are implanted into silicon by pulse biasing Si to a high voltage of -45 kV in a methane plasma. The resulting SiCx:H films are examined with respect to their composition and chemical binding by RBS, NRA and IR spectroscopy. The process may yield all C/Si ratios, up to pure C films. The H depth profile is shown to be strongly governed by the C depth profile. Silicon carbide bonding as well as C–H bonds can be proven in the implanted region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A23.1
Copyright
Copyright © Materials Research Society 2000

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References

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