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Complex defect behavior in Cu(In,Ga)Se2 solar cells with different gallium content

Published online by Cambridge University Press:  01 February 2011

Verena Mertens ,
Jürgen Parisi ,
Robert Kniese ,
Marc Köntges  and
Rolf Reineke-Koch
Verena Mertens
Affiliation:
University of Oldenburg, Institute of Physics, Energy and Semiconductor Research Laboratory, D-26111 Oldenburg, Germany
Jürgen Parisi
Affiliation:
University of Oldenburg, Institute of Physics, Energy and Semiconductor Research Laboratory, D-26111 Oldenburg, Germany
Robert Kniese
Affiliation:
Center of Solar Energy and Hydrogen Research (ZSW), Industriestr. 6, D-70565 Stuttgart, Germany
Marc Köntges
Affiliation:
Institute of Solar Energy Research Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany
Rolf Reineke-Koch
Affiliation:
Institute of Solar Energy Research Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany
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Abstract

We report on capacitance spectroscopy measurements on Cu(In,Ga)Se2 based solar cells where the gallium content was varied systematically. In all samples we found, depending on the measurement conditions, a minority carrier and/or a majority carrier signal. The minority trap can be attributed to the prominent donor-like state N1 or â already discussed in literature. However, the origin of the majority trap remains unclear.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.34
Copyright
Copyright © Materials Research Society 2005

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