Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-07-06T14:31:09.849Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison of Trichlorosilane and Trichlorogermane Decomposition on Silicon Surfaces Using FTIR Spectroscopy

Published online by Cambridge University Press:  22 February 2011

A. C. Dillon ,
M. B. Robinson  and
S. M. George
A. C. Dillon
Affiliation:
Department of Chemistry and Biochemistry, Univ. of Colorado Boulder, Colorado 80309
M. B. Robinson
Affiliation:
Department of Chemistry and Biochemistry, Univ. of Colorado Boulder, Colorado 80309
S. M. George
Affiliation:
Department of Chemistry and Biochemistry, Univ. of Colorado Boulder, Colorado 80309
Get access

Abstract

Fourier transform infrared (FTIR) transmission spectroscopy was used to compare the decomposition of trichlorosilane (SiHCl3) and trichlorogermane (GeHCl3) on silicon surfaces. Chlorosilanes, such as SiHCl3 are employed in silicon chemical vapor deposition (CVD). Chlorosilanes and chlorogermanes are also possible molecular precursors for the controlled atomic layer growth of silicon and germanium. GeHCl3 may be useful for the deposition of germanium on silicon surfaces and the growth of Si1−xGex heterostructures. The FTIR studies were performed in-situ in an ultra-high vacuum chamber on high surface area, porous silicon samples. The FTIR spectra revealed that SiHCl3 dissociatively adsorbs at 200 K to form SiH, SiClx, ClSiH and Cl2SiH surface species. The presence of ClxSiH species is revealed by ClxSiH stretching (2196 cm−1) and bending (775, 744 cm−1) vibrations. The presence of these modes indicates that there is incomplete decomposition of SiHCl3 upon adsorption at 200 K. GeHCl3 also dissociatively adsorbs at 200 K to form SiH and SiClx species. An infrared absorption feature in the Ge-H stretching region (1970–1995 cm−1) was not detected in the FTIR spectrum. The absence of a Ge-H absorption feature argues that there is a complete transfer of hydrogen from germanium to surface silicon atoms at 200 K. The thermal stabilities of the surface species were studied with annealing experiments. The Clx SiH formed upon initial SiHCl3 exposures at 200 K were observed to decompose between 200–590 K and form additional surface SiH and SiCl species. For both GeHCl3 and SiHCl3 dissociative adsorption on porous silicon, the SiCL. (x = 2 or 3) surface species were converted to silicon monochloride surface species between 200–600 K. In addition, SiH surface species were lost upon annealing between 680–780 K as H2 desorbed from the surface. The adsorption kinetics of SiHCl3 and GeHCl3 were also monitored on porous silicon at various isothermal temperatures. These experiments provide insight into the surface chemistry of chlorosilanes and chlorogermanes during CVD and atomic layer controlled growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 405
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pearce, C.W. in VLSI Technology 2nd ed., edited by Sze, S.M. (McGraw-Hill, New York, 1988) Chap. 2.Google Scholar
2. Bloem, J., Giling, L.J. in VLSI Electronics Microstructure Science vol 12 edited by Einspruch, N.G. and Huff, H. (Academic Press, Orlando, Flor, 1989) 89.Google Scholar
3. Zambov, L., Peev, G., Shanov, V. and Drumeva, S., Vacuum 43, 227 (1992).Google Scholar
4. Yarmoff, J.A., Shuh, D.K., Durbin, T.D., Lo, C.W., Lapiano-Smith, D.A., McFeely, F.R. and Himpsel, F.J., J. Vac. Sci. Technol. A 10, 2303 (1992).Google Scholar
5. Nishizawa, J., Aoki, K. and Suzuki, S., J. Cryst. Growth 99, 502 (1990).Google Scholar
6. Koleske, D.D., Gates, S.M. and Beach, D.B., Appl. Phys. Lett. 61, 1802 (1992).Google Scholar
7. Bean, J.C. in Silicon Molecular Beam Epitaxy vol. 2 edited by Kasper, E. and Bean, J.C. (CRC Press Inc. 1988).Google Scholar
8. Hoyt, J.L., King, C.A., Noble, D.B., Gronet, C.M., Gibbons, J.F., Scott, M.P., Laderman, S.S,Google Scholar
Rosner, S.J., Nauka, K., Turner, J. and Kamins, T.I., Thin. Sol. Films 184, 93 (1990).Google Scholar
9. Jang, S. and Reif, R., Appl. Phys. Lett. 59, 3162 (1991).Google Scholar
10. Kruppa, G.H., Shin, S.K. and Beauchamp, J.L., J. Phys. Chem. 94, 327 (1994).Google Scholar
11. Ho, P. and Breiland, W.G., Appl. Phys. Lett. 43, 125 (1983).Google Scholar
12. Ban, V.S. and Gilbert, S.L., J. Cryst Growth 31, 284 (1975).Google Scholar
13. Gupta, P., Coon, P.A., Koehler, B.G. and George, S.M., J. Chem. Phys. 93, 2827 (1990).Google Scholar
14. Coon, P.A., Gupta, P., Wise, M.L. and George, S.M., J. Vac. Sci. and Technol. A 10 324 (1992)Google Scholar
15. Coon, P.A., Wise, M.L. and George, S.M., Surf. Sci. (in press). Google Scholar
16. Whitman, L.J., Joyce, S.A., Yarmoff, J.A., McFeeley, F.R. and Terminello, L.J., Surf. Sci. 232, 297 (1990).Google Scholar
17. Lapiano-Smith, D.A. and McFeeley, F.R., in preparation. Google Scholar
18. Gupta, P., Colvin, V.L. and George, S.M., Phys. Rev. B 37, 8234 (1998).Google Scholar