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Comparison of the Electroluminescence of Blue and Deep-UV Light-Emitting Diodes at Elevated Temperatures

Published online by Cambridge University Press:  01 February 2011

Xian-An Cao ,
T. Stecher  and
S. LeBoeuf
Xian-An Cao
Affiliation:
cao@research.ge.com, GE GRC, One Research Circle, Niskayuna, NY, 12309, United States
T. Stecher
Affiliation:
Stecher@research.ge.com
S. LeBoeuf
Affiliation:
LeBoeuf@research.ge.com
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Abstract

The performance of InGaN and AlGaN-based blue (465nm) and deep ultraviolet (UV) (280 nm) light-emitting diodes (LEDs) at elevated temperatures (25-175 °C) were investigated. As a result of uniform high-Al content AlGaN alloys yielded by migration-enhanced metalorganic chemical vapor deposition, the deep-UV LED showed dominant band-edge emission, much smaller alloy broadening and weaker localization effects as compared to the InGaN LED. Strong carrier localization was retained in the blue LED up to 175 °C, leading to temperature-independent emission intensity at low-energy tails. The UV LED, however, showed a much more rapid decrease in light output with increasing temperature. The characteristic temperature was 37 K, compared to 270 K for the blue LED. These findings implicate the lack of localization effects in AlGaN alloys as one of the causal factors in the poor thermal performance of the deep UV LED and suggest that increasing carrier confining potentials will provide a critical means to improve its thermal stability.

Keywords

optoelectronicIII-Vepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF09-05
Copyright
Copyright © Materials Research Society 2006

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