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Comparison of the Effect of Light Soaking in Porous Silicon and a-Si:H

Published online by Cambridge University Press:  01 February 2011

N. P. Mandal  and
S. C. Agarwal
N. P. Mandal
Affiliation:
Department of Physics, Indian Institute of Technology, Kanpur, 208016, India.
S. C. Agarwal
Affiliation:
Department of Physics, Indian Institute of Technology, Kanpur, 208016, India.
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Abstract

In undoped a-Si:H thin films, light soaking (LS) decreases dark current and photocurrent and increases the electron spin resonance signal monotonically with increasing exposure time, (Staebler-Wronski Effect, SWE). On the other hand, in porous silicon (PS) the light-soaking effect is non-monotonic. For short durations, LS increases dark current, photo current and photoluminescence and decreases the ESR signal. Long exposures of PS, however, have the opposite effect, which is similar to the SWE observed in a-Si:H. All metastabilities in PS as well as in a-Si:H can be removed by annealing, but not by exposure to infrared light. We find that the combined effect of NH3 vapor exposure and LS on PS yields a final state that depends upon the order in which the two steps are performed. This is in contrast to the corresponding observation in a-Si:H. We could arrest the light-induced degradation of PS over long times by coating with a thin polystyrene, which resulted in constant PL and ESR intensities. However, in the case of a-Si:H the polymer coating decreases the SWE, but does not eliminate it. The results can be understood, if we were to propose that LS affects the surface in PS, but affects mainly the bulk in a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A9.8
Copyright
Copyright © Materials Research Society 2005

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