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Comparison of Stresses in Al Lines Under Various Passivations

Published online by Cambridge University Press:  10 February 2011

S. Lee ,
J. C. Bravman ,
P. A. Flinn  and
T. N. Marffib
S. Lee
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
J. C. Bravman
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
P. A. Flinn
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305
T. N. Marffib
Affiliation:
Components Research, Intel Corp., Santa Clara, CA
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Abstract

Thermal stresses in pure Al lines passivated with a baseline 1000Å oxide and additional passivations of 0.5μm oxide, 1μm polymer, or 0.5μm, 1μm, or 2μ nitride were analyzed. Results from finite element analysis and X-ray measurements were compared, and samples were examined in a high voltage SEM for stress voids. For unvoided samples, calculated and measured results showed good correlation, while results for the voided samples showed little correlation due to stress relaxation through voiding. Initial in-situ electromigration test results showed that electromigration voids can occur at stress void sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 415
Copyright
Copyright © Materials Research Society 1997

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References

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