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Comparison of Properties of a-Si1−x Gex:H and a-Si1−x Gex:H:F

Published online by Cambridge University Press:  26 February 2011

K. D. Mackenzie
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
W. Paul
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

The structural, electrical and optical properties of amorphous Si-Ge alloys prepared either from mixtures of hydrides or of fluorides will be compared. It will be shown that the majority of many properties studied are essentially the same, the major exceptions being the structure of thin films used for TEM investigation, and the photocurrents developed between contacts in a coplanar configuration. Possible explanations for the result of including fluorine in the preparation plasma will be discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

1. Mackenzie, K. D., Eggert, J. R., Leopold, D. J., Li, Y. M., Lin, S. and Paul, W., Phys. Rev. B31, 2198 (1985).Google Scholar
2. Nozawa, K., Yamaguchi, Y., Hanna, J. and Shimizu, I., J. Non-Cryst. Solids 59–60, 533 (1983).Google Scholar
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4. Schiff, E. A., Phil. Mag. Lett. 55, 87 (1987).Google Scholar
5. More details on the chemical constitution of the films, and on the property measurement, will be given in a forthcoming paper by Mackenzie, Burnett, Eggert, Li and Paul.Google Scholar
6. Bork, V. P., Fedders, P. A., Norberg, R. E., Leopold, D. J., Mackenzie, K. D. and Paul, W., in Material Issues in Applications of Amorphous Sililcon Technology (Adler, D., Hamakawa, Y. and Madan, A. editors), Mat. Res. Soc. Symp. Proc. 70, 307 (1986).Google Scholar
7. See, for instance, Carius, R. and Fuhs, W., in Optical Effects in Amorphous Semiconductors (Taylor, P. C. and Bishop, S. G., editors), AIP Conf. Proc. 120, 125 (1984); F. Boulitrop, in Optical Effects in Amorphous Semiconductors (P. C. Taylor and S. G. Bishop, editors), AIP Conf. Proc. 120, 125 (1984), 178.Google Scholar